Power Amplifier System for High-Power, Passively Q-switched Micro laser
I. INTRODUCTION
Passively Q-switched microchip lasers are simple, compact and reliable sources of high repetition rate (1 to 100 kHz), near-infrared, sub-nanosecond pulses. To date, low-energy (0.3 to 3 mJ/pulse) and mid-energy (30 to 180 mJ/pulse) microchip lasers have been reported [1] with pulse durations of 200 to 500 ps and 650 to 2000 ps, respectively. For some applications, for instance, high precision ranging and imaging, higher-energy pulses, up to 360-440 mJ/pulse [2, 3] are required with pulse durations approaching 200 ps. The pathway to higher pulse energies requires the use of higher saturable absorption, which inevitably leads to longer pulse durations. An alternative approach is the use of a MOPA design with a microlaser oscillator and multipass amplifier [3]. In the only reported work to date on this approach, a MOPA system operated in the 10-m J range, producing 500-ps pulses [4].
We present here a MOPA system generating 335 m J at 1064 nm with efficient harmonic conversion to the visible and UV. At all wavelengths, the pulse durations were